IPC100N04S51R7ATMA1 vs IPB100N04S4H2ATMA1 موازنہ
تفصیلی ساتھ ساتھ موازنہ از IPC100N04S51R7ATMA1 بذریعہ Infineon اور IPB100N04S4H2ATMA1 بذریعہ Infineon. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | IPC100N04S51R7ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| برانڈ | Infineon | Infineon |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-5 | — |
| ٹرانزسٹر کی قسم | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage VDS | 40 V | — |
| Continuous Drain Current ID | 100 A (at TC) | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation PD | 115 W (at TC) | — |
| Thermal Resistance RthJC | 1.3 K/W | — |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C | -55C to +175C |
| پیکیج | PG-TDSON-8-34 (SS08 leadless) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| ماؤنٹنگ ٹائپ | Surface Mount | Surface Mount |
| MSL لیول | MSL1 (260 °C peak reflow) | MSL1 (up to 260C peak reflow) |
| AEC-Q101 Qualified | Yes | — |
| Avalanche Tested | 100% tested | — |
| RoHS اسٹیٹس | Compliant (Green Product) | — |
| Built-in Body Diode | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant (Green Product) |