IPD042P03L3GATMA1 vs IPD068P03L3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD042P03L3GATMA1 sa pamamagitan ng Infineon at IPD068P03L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD042P03L3GATMA1 IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 - 30V P-Ch 4.2mΩ 70A MOSFET | Infineon

IPD042P03L3GATMA1 ✓ Nakahanda
Infineon
IPD068P03L3GATMA1 IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon

IPD068P03L3GATMA1 - 30V P-Ch OptiMOS MOSFET, 70A | Infineon

IPD068P03L3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD042P03L3GATMA1 IPD068P03L3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID, Tc=25°C) -70 A —
Pulsed Drain Current (IDM) -280 A —
RDS(on) max @ VGS = -10 V 4.2 mΩ —
RDS(on) max @ VGS = -4.5 V [DATA_NEEDED: RDS(on) @ -4.5 V] —
Gate Threshold Voltage (VGS(th)) -1.5 V (typ) —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Total Power Dissipation (PD @ Tc=25°C) 150 W —
Single-Pulse Avalanche Energy (EAS) 290 mJ —
Hanay ng Temperature na Operasyon -55°C to +175°C (TJ) -55C to +175C (junction)
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Technology OptiMOS™ P (Trench) Trench MOSFET (OptiMOS)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (unlimited floor life at <30C/85% RH)
Manufacturer — Infineon Technologies
Product Family — OptiMOS P-Channel Power MOSFET
Polarity / Channel Type — P-Channel
Drain-Source Voltage (V_DS) — -30 V
Continuous Drain Current (I_D) at T_C — -70 A
Pulsed Drain Current (I_D,pulse) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at T_C — 100 W
R_DS(on) max at V_GS=-10V — 0.005 ohm (typical)
Gate-Source Threshold Voltage (V_GS(th)) — -1.0 V to -2.2 V
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Channel Mode — Enhancement

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