IPD090N03LGATMA1 vs IRL540NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD090N03LGATMA1 sa pamamagitan ng Infineon at IRL540NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD090N03LGATMA1 | IRL540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 49.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Packhaging | PG-TO252-3-11 (DPAK) | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Level ng MSL | 1 (unlimited) | — |
| Tindminan RoHS | Compliant | Compliant |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRL540NPBF |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | HEXFET (Planar DMOS) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Gate-to-Source Voltage (VGS) max | — | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | — | 36 A |
| Pulsed Drain Current (IDM) | — | 130 A (pulsed) |
| On-Resistance RDS(on) max | — | 44 mOhm at VGS=5V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2 V (logic level) |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Lead-Free | — | Yes (PBF suffix) |