IPD090N03LGATMA1 vs IRL540NPBF 比較
詳細並排比較 IPD090N03LGATMA1 由 Infineon 與 IRL540NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD090N03LGATMA1 | IRL540NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | — |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | — |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | — |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | — |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 49.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| 工作溫度範圍 | -55C to +175C (junction) | — |
| 封裝 | PG-TO252-3-11 (DPAK) | TO-220AB (through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant | Compliant |
| Technology Family | OptiMOS 30V | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRL540NPBF |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | HEXFET (Planar DMOS) |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Gate-to-Source Voltage (VGS) max | — | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | — | 36 A |
| Pulsed Drain Current (IDM) | — | 130 A (pulsed) |
| On-Resistance RDS(on) max | — | 44 mOhm at VGS=5V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2 V (logic level) |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| 工作接面溫度 | — | -55 C to +175 C |
| Lead-Free | — | Yes (PBF suffix) |