IPD30N08S2L21ATMA1 vs IPD30N06S2L13ATMA4 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N08S2L21ATMA1 sa pamamagitan ng Infineon at IPD30N06S2L13ATMA4 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ NakahandaInfineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD30N08S2L21ATMA1 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | — |
| Maximum Junction Temperature | +175C | — |
| Packhaging | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Drain tab + Gate + Source) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 | — |
| Part Family | — | OptiMOS |
| Channel Type | — | N-Channel |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Temperature na Operasyon | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |