IPD50P04P413ATMA2 vs IPD50P04P4L11ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50P04P413ATMA2 sa pamamagitan ng Infineon at IPD50P04P4L11ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
IPD50P04P413ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50P04P413ATMA2 | IPD50P04P4L11ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | — |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | — |
| Uri ng Transistor | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Bilang ng Pin | — | 3 (Drain / Tab / Source / Gate) |
| RoHS Compliance | — | Compliant |