IPD60R380C6ATMA1 vs IPD60R280P7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R380C6ATMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon
IPD60R380C6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R380C6ATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 10.6 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance RDS(on) max @ VGS=10V | 380 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | 4 V max @ ID = 190 µA |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25C | 83 W | — |
| Operating Junction Temperature (TJ) | -55C to +150C | -40 °C to +150 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Technology | CoolMOS C6 Superjunction | CoolMOS P7 Superjunction (SJ) N-channel |
| FET Type | N-Channel | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Drain-Tab Connection | Exposed pad (electrically connected to drain) | — |
| Continuous Drain Current (ID, Tc) | — | 12 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Integrated ESD Protection | — | Yes |