IPD65R380E6ATMA1 vs IPD65R225C7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R380E6ATMA1 sa pamamagitan ng Infineon at IPD65R225C7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD65R225C7ATMA1 IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon

IPD65R225C7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD65R380E6ATMA1 IPD65R225C7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 CoolMOS C7
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (CoolMOS™) Super-junction (SJ) / CoolMOS
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C -55°C to +150°C
Packhaging PG-TO252-3 (DPAK), surface mount PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Bilang ng Pins — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

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