IPD70R1K4P7SAUMA1 vs IAUC100N04S6L020ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70R1K4P7SAUMA1 sa pamamagitan ng Infineon at IAUC100N04S6L020ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Nakahanda
Infineon
IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70R1K4P7SAUMA1 IAUC100N04S6L020ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Power Dissipation (Ptot) at Tc=25C 23 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TO252-3 (DPAK) PG-TDSON-8 (SS08, 5x6 mm leadless)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) —
Technology Superjunction (CoolMOS P7) OptiMOS 6
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
Tindminan RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (TJ)
Qualification — Automotive grade
Packaging — Tape & Reel (TMA1)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita