IPD80R600P7ATMA1 vs IPD60R600C6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R600P7ATMA1 sa pamamagitan ng Infineon at IPD60R600C6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD80R600P7ATMA1 | IPD60R600C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | [DATA_NEEDED: VGS(th)] |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55 °C to +150 °C |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS C6 (Superjunction) |
| Polarity | N-Channel | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Part Suffix | — | ATMA1 (Tape & Reel) |
| Uri ng Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | — | 7.3 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) Max at VGS=10V | — | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | — | 63 W |
| Bilang ng Pins | — | 3 (Gate, Drain, Source) |
| Tindminan RoHS | — | Compliant |