IPD80R600P7ATMA1 vs IPD60R600C6ATMA1 比較
詳細並排比較 IPD80R600P7ATMA1 由 Infineon 與 IPD60R600C6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD80R600P7ATMA1 | IPD60R600C6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | [DATA_NEEDED: VGS(th)] |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| 工作溫度範圍 | -55 C to +150 C | -55 °C to +150 °C |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS C6 (Superjunction) |
| Polarity | N-Channel | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS C6 |
| Part Suffix | — | ATMA1 (Tape & Reel) |
| 電晶體類型 | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | — | 7.3 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100°C] |
| On-Resistance RDS(on) Max at VGS=10V | — | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | — | 63 W |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| RoHS 狀態 | — | Compliant |