IPD90N10S406ATMA1 vs IPD65R380E6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N10S406ATMA1 sa pamamagitan ng Infineon at IPD65R380E6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΩ 10.6A | Infineon
IPD65R380E6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD90N10S406ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD90N10S406ATMA1 | — |
| Family / Series | OptiMOS | — |
| Uri ng Transistor | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 90 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 136 W | — |
| Gate Drive Level | Normal Level (10 V typical Vgs) | — |
| Avalanche Energy Rating (EAS) | 250 mJ | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Storage Temperature Range | -55 °C to +175 °C | — |
| Packhaging / Kaso | PG-TO252-3-313 (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 (Gate, Drain, Source) | — |
| Level ng MSL | MSL1 (260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Built-in Body Diode | Yes (single with built-in diode) | — |
| Avalanche Tested | 100% Avalanche tested | — |
| Packaging | Tape & Reel (Cut Tape / Reel options available) | — |
| Series | — | CoolMOS™ E6 |
| Technology | — | Superjunction (CoolMOS™) |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Hanay ng Temperature na Operasyon | — | -55 °C to +150 °C |
| Packhaging | — | PG-TO252-3 (DPAK), surface mount |
| Tindminan RoHS | — | Compliant |