IPL60R115CFD7AUMA1 vs IAUC120N06S5L015ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R115CFD7AUMA1 sa pamamagitan ng Infineon at IAUC120N06S5L015ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R115CFD7AUMA1 - 600V 22A CoolMOS CFD7 MOSFET | Infineon
IPL60R115CFD7AUMA1 ✓ NakahandaInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R115CFD7AUMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| Packhaging / Kaso | PG-VSON-4 (5x6 mm) with exposed pad | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (exposed pad) |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | N-Channel MOSFET (OptiMOS 5) |
| Integrated Body Diode | Yes - fast body diode (CFD) | — |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55C to +175C (Tj) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Tindminan RoHS | Compliant (per distributor listings) | Compliant |
| Bilang ng Pin | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Packhaging | — | PG-TDSON-8-43 (Surface Mount) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |