IPL60R125P7AUMA1 vs IPW60R037P7XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R125P7AUMA1 sa pamamagitan ng Infineon at IPW60R037P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΩ 27A | Infineon
IPL60R125P7AUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPL60R125P7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | CoolMOS Superjunction (SJ) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25C) | 27 A | — |
| On-State Resistance RDS(on) max | 125 mOhm | — |
| Gate Charge (Qg, typ) | 36 nC | — |
| Total Gate Charge Qg (typ) | 36 nC | — |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Temperature ng Junction na Operasyon | -55 C to +150 C | -55 °C to +150 °C |
| Packhaging | ThinPAK 8x8 (4-pin + exposed pad) | PG-TO247-3 (TO-247-3, through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | MSL 2 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | — |
| Series | — | CoolMOS™ P7 |
| Uri ng Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |