IPP120N08S4-03 vs IPP120N08S403AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP120N08S4-03 sa pamamagitan ng Infineon at IPP120N08S403AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS
IPP120N08S403AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP120N08S4-03 | IPP120N08S403AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPP120N08S4-03 | — |
| Manufacturer | Infineon Technologies | — |
| Family | OptiMOS-T2 Power-Transistor | — |
| Channel Type | N-channel Enhancement Mode | N-Channel enhancement mode |
| Drain-Source Voltage VDS max | 80 V | — |
| Continuous Drain Current ID | 120 A (bondwire limited) | — |
| Silicon-Limited Current | 245 A at TC = 25 °C | — |
| On-State Resistance RDS(on) max | 2.5 mΩ at VGS = 10 V | — |
| Gate-Source Voltage VGS | ±20 V (max) | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Thermal Resistance RthJC | 0.54 K/W | — |
| Avalanche Rated | 100 % Avalanche tested | — |
| Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | TO-220-3 (IPAK) through-hole | TO-220-3-1 (PG-TO220-3-1) |
| Uri ng Pagpapasok | Through-Hole | Through Hole |
| Level ng MSL | MSL1 (peak reflow 260 °C) | MSL1 (peak reflow up to 260 C) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Green Product, RoHS compliant | — |
| Orderable Part Number | IPP120N08S403AKSA1 | — |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 120 A |
| Pulsed Drain Current (bondwire-limited) | — | 245 A at 25 C |
| Maximum Power Dissipation (Ptot) | — | 278 W (Tc) |
| On-State Resistance (RDS(on)) | — | 2.8 mOhm typical at VGS=10 V, ID=100 A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max |
| Total Gate Charge (Qg) | — | 167 nC |
| Input Capacitance (Ciss) | — | 11550 pF |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.54 K/W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Avalanche Rating | — | 100% avalanche-tested |
| Tindminan RoHS | — | Compliant (Green Product) |
| Technology Family | — | OptiMOS |