IPP147N12N3GXKSA1 vs IPP100N12S305AKSA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPP147N12N3GXKSA1 sa pamamagitan ng Infineon at IPP100N12S305AKSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon

IPP147N12N3GXKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPP147N12N3GXKSA1 IPP100N12S305AKSA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
Technology OptiMOS 3 trench MOSFET —
Uri ng Transistor N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-to-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) at Tc=25C 56 A —
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) —
Power Dissipation (Pd) at Tc=25C 107 W —
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj max and operating range] -55C to +175C (TJ)
Packhaging PG-TO220-3 (through-hole) PG-TO220-3-1 (Through Hole)
Uri ng Pagpapasok Through Hole Through Hole
Bilang ng Pins 3 (3+Tab) —
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] —
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] —
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] —
Avalanche Energy Rating Single-pulse avalanche rated —
Tindminan RoHS Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes —
Qualification Automotive grade (per datasheet.live listing 'Automotive') —
Packing Method Tube —
Product Family — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID, TC=25C) — 100 A
Continuous Drain Current (ID, TC=100C) — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) — 300 W
On-State Resistance R_DS(on) max @ VGS=10V — [DATA_NEEDED: R_DS(on) max]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: total gate charge]
Total Gate Charge Qg — [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Bilang ng Pin — 3 (Gate, Drain, Source)
Level ng MSL — N/A (Through Hole)
Avalanche Energy Rated — Yes (single-pulse)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita