IPP147N12N3GXKSA1 vs IPP100N12S305AKSA2 Comparison
Detailed side-by-side comparison of IPP147N12N3GXKSA1 by Infineon and IPP100N12S305AKSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β ActiveSpecification Comparison
| Parameter | IPP147N12N3GXKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $3.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Technology | OptiMOS 3 trench MOSFET | β |
| Transistor Type | N-Channel MOSFET | β |
| Configuration | Single with built-in diode | β |
| Drain-to-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) at Tc=25C | 56 A | β |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | β |
| Power Dissipation (Pd) at Tc=25C | 107 W | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | -55C to +175C (TJ) |
| Package | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (3+Tab) | β |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | β |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | β |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | β |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | β |
| Avalanche Energy Rating | Single-pulse avalanche rated | β |
| RoHS Status | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | β |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | β |
| Packing Method | Tube | β |
| Product Family | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 120 V |
| Continuous Drain Current (ID, TC=25C) | β | 100 A |
| Continuous Drain Current (ID, TC=100C) | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | β | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | β | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | β | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr value] |
| Pin Count | β | 3 (Gate, Drain, Source) |
| MSL Level | β | N/A (Through Hole) |
| Avalanche Energy Rated | β | Yes (single-pulse) |