IPP147N12N3GXKSA1 vs IPP100N12S305AKSA2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPP147N12N3GXKSA1 tarafından Infineon ve IPP100N12S305AKSA2 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ AktifÖzellik Karşılaştırması
| Parametre | IPP147N12N3GXKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Technology | OptiMOS 3 trench MOSFET | — |
| Transistor Türü | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) at Tc=25C | 56 A | — |
| Continuous Drain Current (Id) at Ta | 56 A (Ta, per DigiKey listing) | — |
| Power Dissipation (Pd) at Tc=25C | 107 W | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: Tj max and operating range] | -55C to +175C (TJ) |
| Paket | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Montaj Türü | Through Hole | Through Hole |
| Pin Sayısı | 3 (3+Tab) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Rds(on) max | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] | — |
| Vgs(th) (Gate Threshold) | [DATA_NEEDED: typical gate threshold voltage] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: typical Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: typical Coss] | — |
| Reverse Recovery (trr) | [DATA_NEEDED: body-diode reverse recovery time] | — |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| RoHS Durumu | Compliant (per distributor listing suffixes XKSA1) | Compliant |
| Lead-Free | Yes | — |
| Qualification | Automotive grade (per datasheet.live listing 'Automotive') | — |
| Packing Method | Tube | — |
| Product Family | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID, TC=25C) | — | 100 A |
| Continuous Drain Current (ID, TC=100C) | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | — | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | — | [DATA_NEEDED: R_DS(on) max] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| Pin Sayısı | — | 3 (Gate, Drain, Source) |
| MSL Seviyesi | — | N/A (Through Hole) |
| Avalanche Energy Rated | — | Yes (single-pulse) |