IPW60R041C6FKSA1 vs IPP147N12N3GXKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R041C6FKSA1 sa pamamagitan ng Infineon at IPP147N12N3GXKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPW60R041C6FKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | [DATA_NEEDED: Tj max and operating range] |
| Packhaging | PG-TO247-3-1 (TO-247-3) | PG-TO220-3 (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Level ng MSL | Not Applicable (Through-hole) | — |
| Tindminan RoHS | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Uri ng Transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Bilang ng Pins | — | 3 (3+Tab) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |