IQD009N06NM5SCATMA1 vs IAUC60N04S6L030HATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQD009N06NM5SCATMA1 sa pamamagitan ng Infineon at IAUC60N04S6L030HATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Nakahanda
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQD009N06NM5SCATMA1 IAUC60N04S6L030HATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 60V (IQD009N06NM5) OptiMOS 6
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] 2 V
Packhaging PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj min/max] —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL classification] 1 (per JEDEC J-STD-020)
Tape and Reel Packaging Yes (suffix SCATMA1) —
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Maximum Power Dissipation (PD) at TC — 75 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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