IQD009N06NM5SCATMA1 vs IAUC60N04S6L030HATMA1 对比
详细并排对比 IQD009N06NM5SCATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQD009N06NM5SCATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.42 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | OptiMOS 6 |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Ta=25C) | 42 A | — |
| Pulsed Drain Current (IDM, Tc) | 445 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 2 V |
| 封装 | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL classification] | 1 (per JEDEC J-STD-020) |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | — |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| 工作结温 | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |