IQDH88N06LM5CGSCATMA1 vs IQDH35N03LM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5CGSCATMA1 sa pamamagitan ng Infineon at IQDH35N03LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
IQDH88N06LM5CGSCATMA1 ✓ NakahandaInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH88N06LM5CGSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Patuloy na Drain Current (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (TJ) | -55 C to +175 C |
| Packhaging | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta | — | 66 A |
| Pulsed Drain Current (IDM) at Tc | — | 700 A |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 278 W |
| Marking | — | IQDH35N03LM5S |