IQE008N03LM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5CGSCATMA1 sa pamamagitan ng Infineon at IQE008N03LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IQE008N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array | Single N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 °C to +150 °C |
| Packhaging | PG-WHTFN-9 (WHTFN) | PG-WHSON-8 (Source-Down) |
| Uri ng Pagpapasok | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | — |
| Bilang ng Pins | 9 (WHTFN with exposed thermal pads) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes (Infineon standard for OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |