IQE008N03LM5SCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5SCATMA1 sa pamamagitan ng Infineon at IQEH50NE2LM7UCGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 ✓ Nakahanda
Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE008N03LM5SCATMA1 IQEH50NE2LM7UCGSCATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 7 Power-Transistor
Technology Trench MOSFET (N-Channel) Silicon N-Channel Power MOSFET
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 252 A —
On-Resistance (RDS(on)) max 0.85 mΩ at VGS = 10 V —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate Drive Voltage 10 V (recommended) —
Packhaging PG-WHSON-8 (Source-Down) PG-WHTFN-9-1 (surface mount)
Configuration Single N-Channel —
Uri ng Pagpapasok Surface Mount Surface Mount
Cooling Architecture Source-Down, dual-side cooling —
Hanay ng Temperature na Operasyon -55 °C to +150 °C —
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at TA — 54 A
Continuous Drain Current (ID) at TC — 422 A
RDS(on) Max — 0.5 mΩ
Gate Threshold Voltage (VGS(th)) typ — 2 V
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 150 W
Maximum Junction Temperature — 175 °C
Series — OptiMOS 7

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