IQE018N06NM6SCATMA1 vs ISC015N06NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE018N06NM6SCATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE018N06NM6SCATMA1 - 60V 1.8mΩ OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6SCATMA1 ✓ NakahandaInfineon
ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N06NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE018N06NM6SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC | 178 A | — |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 125 W | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-WHSON-8-1 (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55 C to +175 C |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |