IQE036N08NM6CGATMA1 vs IQD009N06NM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE036N08NM6CGATMA1 sa pamamagitan ng Infineon at IQD009N06NM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE036N08NM6CGATMA1 | IQD009N06NM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: Tj min/max] |
| Packhaging | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL classification] |
| Tindminan RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | — |
| Configuration | Single N-channel, Source-Down | — |
| Part Series | — | OptiMOS 5 60V (IQD009N06NM5) |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Ta=25C) | — | 42 A |
| Pulsed Drain Current (IDM, Tc) | — | 445 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.9 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS abs max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Tape and Reel Packaging | — | Yes (suffix SCATMA1) |