IQE220N15NM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE220N15NM5CGSCATMA1 sa pamamagitan ng Infineon at IQE008N03LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IQE220N15NM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | 2 V (typical) |
| Packhaging | PG-WHTFN-9 (Source-Down) | PG-WHSON-8 (Source-Down) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (N-Channel) |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55 °C to +150 °C |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Configuration | — | Single N-Channel |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |