IRF7205PBF vs IRF9Z34NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7205PBF sa pamamagitan ng Infineon at IRF9Z34NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7205PBF IRF9Z34NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -4.6 A —
On-Resistance RDS(on) max at VGS=-10V 70 mOhm —
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology IR MOSFET (HEXFET, planar cell) HEXFET (5th generation)
Packhaging SO-8 TO-220AB (through-hole, 3-pin)
Uri ng Pagpapasok Surface Mount Through Hole
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) -55C to +175C (junction)
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] —
Switching Frequency Optimization Below 100 kHz —
Qualification JEDEC standard —
Tindminan RoHS Compliant (Pb-free per PBF suffix) Compliant
Generation Fourth Generation HEXFET —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)

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