IRF7205TRPBF vs IRFR9024NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7205TRPBF sa pamamagitan ng Infineon at IRFR9024NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF7205TRPBF IRFR9024NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) HEXFET (Generation 5)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
Pwersang Pinahihigpit (TC=25°C) 2.5 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C —
Packhaging SO-8 (8-SO) —
Uri ng Pagpapasok Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Polarity — P-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -11 A
On-Resistance RDS(on) max at VGS=-10V — 175 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
Bilang ng Pin — 3 (Drain, Gate, Source + Tab)
Hanay ng Temperature na Operasyon — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

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