IRF7205TRPBF vs IRFR9024NTRLPBF 比較

詳細並排比較 IRF7205TRPBF 由 Infineon 與 IRFR9024NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ 啟用中

規格比較

參數 IRF7205TRPBF IRFR9024NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) HEXFET (Generation 5)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
功率耗散 (TC=25°C) 2.5 W —
工作接面溫度 -55 °C to +150 °C —
封裝 SO-8 (8-SO) —
安裝類型 Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Polarity — P-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -11 A
On-Resistance RDS(on) max at VGS=-10V — 175 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Power Dissipation (PD) at TC=25C — 38 W
Gate Charge (Qg) typical — 12.7 nC
Package Type — TO-252AA (DPAK)
腳位數 — 3 (Drain, Gate, Source + Tab)
工作溫度範圍 — -55C to +175C
Lead-Free / RoHS — Yes (LPBF suffix)
Reel Orientation — Left (TRL suffix)

資料表與資源

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