IRF7341GTRPBF vs IRF7389PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7341GTRPBF sa pamamagitan ng Infineon at IRF7389PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7341GTRPBF IRF7389PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel N and P-Channel (complementary half-bridge)
Technology IR HEXFET Planar MOSFET Generation V HEXFET
Packhaging 8-SO (SOIC-8) SO-8 (SOIC-8) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Hanay ng Temperature na Operasyon -55 C to +175 C [DATA_NEEDED: full operating temperature range]
Tindminan RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
Wala sa Halogen — Yes
Avalanche Rated — Yes (fully avalanche rated)

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