IRF7832TRPBF vs IRF8736TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7832TRPBF sa pamamagitan ng Infineon at IRF8736TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7832TRPBF IRF8736TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF7832TRPBF —
FET Type N-Channel N-Channel
Technology HEXFET (trench MOSFET) StrongIRFET / HEXFET
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 20 A 18 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 4.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typical 1.0 V to 2.5 V —
Total Gate Charge (Qg) typical 34 nC —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55 C to +150 C (TJ) -55C to +150C (junction)
Packhaging 8-SO (SOIC-8) SO-8 (8-SO, MS-012AA)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant —
Lead-Free Yes —
Drain-Source Voltage (VDS) Max — 30 V
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita