IRFB4110PBF vs IRF1407PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4110PBF sa pamamagitan ng Infineon at IRF1407PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4110PBF IRF1407PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $1.55 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Technology HEXFET (planar DMOS) HEXFET (stripe-planar MOSFET)
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant (Pb-free suffix) —
Lead-Free Yes (PBF suffix denotes Pb-free) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 130 A
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Hanay ng Temperature na Operasyon — -55 C to +175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita