IRFR1205TRPBF vs IRFR5305TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR1205TRPBF sa pamamagitan ng Infineon at IRFR5305TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR1205TRPBF IRFR5305TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) HEXFET fifth-generation planar MOSFET
Drain-Source Voltage (VDS) 55 V -55 V
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max +/- 20 V ±20 V
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max [DATA_NEEDED: VGS(th) range]
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC —
Power Dissition (PD) at TC=25C 107 W —
Temperature ng Junction na Operasyon -55C to +175C -55C to +175C
Packhaging TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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