IRFR120NTRPBF vs IRFL014NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR120NTRPBF sa pamamagitan ng Infineon at IRFL014NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFR120NTRPBF | IRFL014NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Hanay ng Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (planar N-channel, fifth generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (junction) |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | — | Yes / Compliant |
| Level ng MSL | — | Level 1 (per JEDEC J-STD-020) |