IRFR4105TRPBF vs IRFR3710ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR4105TRPBF sa pamamagitan ng Infineon at IRFR3710ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ Nakahanda
Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR4105TRPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C —
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
Tindminan RoHS Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
Level ng MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free — Yes

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