IRFR4105TRPBF vs IRFR3710ZTRPBF 比較

詳細並排比較 IRFR4105TRPBF 由 Infineon 與 IRFR3710ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR4105TRPBF IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF - 55V 27A N-Channel HEXFET MOSFET | Infineon

IRFR4105TRPBF ✓ 啟用中
Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ 啟用中

規格比較

參數 IRFR4105TRPBF IRFR3710ZTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology HEXFET (5th generation IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (V_DS max) 55 V —
Continuous Drain Current (I_D at Tc) 27 A —
On-Resistance (R_DS(on) max at V_GS=10V) 45 milliohm —
Gate-Source Voltage (V_GS max) 20 V —
Total Gate Charge (Q_G) 22.7 nC —
Power Dissipation (P_D at Tc) 68 W —
封裝 TO-252AA (DPAK) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +175C —
Gate Threshold Voltage (V_GS(th) typ) [DATA_NEEDED: V_GS(th) typical value] —
RoHS 狀態 Compliant (lead-free, PBF suffix) Compliant
Packaging Type Tape and Reel (TRPBF) —
MSL 等級 [DATA_NEEDED: MSL rating] —
Avalanche Energy (E_AS) [DATA_NEEDED: E_AS rating] —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
工作接面溫度 — -55C to +175C
Lead-Free — Yes

資料表與資源

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