IRFR4620TRLPBF vs IRFR3607TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR4620TRLPBF sa pamamagitan ng Infineon at IRFR3607TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR4620TRLPBF IRFR3607TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFR4620TRLPBF —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) 24 A at Tc —
On-Resistance (RDS(on)) 78 mOhm max at VGS=10V —
Gate Charge (Qg) 25 nC typical —
Power Dissipation (PD) 144 W at Tc —
Technology IR MOSFET IR HEXFET (planar DMOS)
Packhaging / Kaso TO-252AA (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +175C —
Lead Free Yes —
Tindminan RoHS Compliant —
Level ng MSL 1 (Unlimited) —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Gate Threshold Voltage (VGS(th)) — 4 V
Total Gate Charge (Qg) — 56 nC
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
Hanay ng Temperature na Operasyon — -55C to +175C (TJ max 175C per datasheet convention)
Packhaging — TO-252AA (DPAK)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

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