IRFR5410TRPBF vs IRFR5305TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRPBF sa pamamagitan ng Infineon at IRFR5305TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5410TRPBF IRFR5305TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Total Gate Charge (Qg) typ 70 nC —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Power Dissition (PD) at TC = 25 °C 66 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET fifth-generation planar MOSFET
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
Level ng MSL [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
Polarity / Channel Type — P-Channel
Continuous Drain Current (ID) at Tc=25C — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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