IRLML5103TRPBF vs BSS138NH6327XTSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML5103TRPBF sa pamamagitan ng Infineon at BSS138NH6327XTSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML5103TRPBF | BSS138NH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | — |
| Packhaging | Micro3/SOT-23 | PG-SOT-23 (3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | 175 C | — |
| Tindminan RoHS | Compliant | — |
| Footprint | SOT-23 | — |
| Operating Mode | — | Enhancement |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 60 V |
| R_DS(on) max @ V_GS=10V | — | 3.5 ohm |
| Continuous Drain Current (Ta) | — | 230 mA |
| Power Dissipation (Ta) | — | 360 mW |
| Gate Threshold V_GS(th) | — | [DATA_NEEDED: typical V_GS(th) value] |
| Hanay ng Temperature na Operasyon | — | [DATA_NEEDED: Tj max and operating range] |
| Gate-Source Voltage V_GS max | — | ±20 V |
| dv/dt Rated | — | Yes |
| Wala sa Halogen | — | Yes (per IEC 61249-2-21) |
| RoHS Compliance | — | Compliant |
| AEC-Q101 Qualification | — | Qualified |
| Lead Plating | — | Pb-free |
| Marking Code | — | [DATA_NEEDED: top-side marking code] |
| Packaging | — | Tape and Reel |