IRLML5103TRPBF vs IRLML6346TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML5103TRPBF sa pamamagitan ng Infineon at IRLML6346TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML5103TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | HEXFET Power MOSFET |
| Packhaging | Micro3/SOT-23 | Micro3 / SOT-23 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | 175 C | — |
| Tindminan RoHS | Compliant | Compliant |
| Footprint | SOT-23 | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Level ng MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |