IRLR2705TRLPBF vs IRFR5305TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR2705TRLPBF sa pamamagitan ng Infineon at IRFR5305TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR2705TRLPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET (HexFET) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 28 A | 31 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | -2 V to -4 V |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Power Dissipation (PD) at TC=25C | 68 W | 110 W |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET) |
| Configuration | Single N-Channel | — |
| Level ng MSL | 1 (unlimited floor life at <30C / 85% RH) | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Tindminan RoHS | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |