IRLR2705TRLPBF vs IRFR5305TRPBF 比較
詳細並排比較 IRLR2705TRLPBF 由 Infineon 與 IRFR5305TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR2705TRLPBF | IRFR5305TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET (HexFET) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 28 A | 31 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | -2 V to -4 V |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Power Dissipation (PD) at TC=25C | 68 W | 110 W |
| 工作溫度範圍 | -55C to +175C | -55 C to +175 C |
| 封裝 | TO-252AA (DPAK) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET) |
| Configuration | Single N-Channel | — |
| MSL 等級 | 1 (unlimited floor life at <30C / 85% RH) | 1 |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| RoHS 狀態 | — | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | — | Yes (PBF suffix) |