IRLR3110ZTRLPBF vs IRLR3110ZTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3110ZTRLPBF sa pamamagitan ng Infineon at IRLR3110ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR3110ZTRLPBF | IRLR3110ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 42 A | — |
| Maximum Drain Current (ID max) | 63 A | — |
| On-Resistance (RDS(on) max) | 14 mOhm | — |
| Gate Charge (Qg) | 34 nC | — |
| Technology | IR HEXFET / Trench MOSFET | HEXFET / Trench MOSFET |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation (PD) at TC | 140 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Drain, Gate, Source + Tab) | — |
| Repetitive Avalanche Rated | Yes | — |
| Tindminan RoHS | Compliant (PBF suffix) | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL Level] | 1 (Unlimited) |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 15 nC |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Lead-Free Plating | — | Yes (PBF suffix) |
| Wala sa Halogen | — | Yes |