IRLR3110ZTRLPBF vs IRLR3110ZTRPBF Comparison
Detailed side-by-side comparison of IRLR3110ZTRLPBF by Infineon and IRLR3110ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3110ZTRLPBF | IRLR3110ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 42 A | — |
| Maximum Drain Current (ID max) | 63 A | — |
| On-Resistance (RDS(on) max) | 14 mOhm | — |
| Gate Charge (Qg) | 34 nC | — |
| Technology | IR HEXFET / Trench MOSFET | HEXFET / Trench MOSFET |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation (PD) at TC | 140 W | — |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Gate, Source + Tab) | — |
| Repetitive Avalanche Rated | Yes | — |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| MSL Level | [DATA_NEEDED: MSL Level] | 1 (Unlimited) |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10V | — | 14 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 15 nC |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Lead-Free Plating | — | Yes (PBF suffix) |
| Halogen Free | — | Yes |