IRLR3636TRLPBF vs IRLR2905TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3636TRLPBF sa pamamagitan ng Infineon at IRLR2905TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR3636TRLPBF | IRLR2905TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | IR HEXFET® (IR MOSFET™) | HEXFET (IR MOSFET, fifth generation) |
| Drain-to-Source Voltage (VDS) | 60 V | 55 V |
| Continuous Drain Current (ID, TC=25°C) | 50 A | — |
| Continuous Drain Current (ID, TC=100°C) | 32 A [DATA_NEEDED: exact TC=100°C ID rating] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM rating] | [DATA_NEEDED: pulsed drain current value] |
| RDS(on) Max @ VGS=10V | 6.8 mΩ | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic-level) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (QG) | 33 nC | — |
| Power Dissipation (PD, TC=25°C) | 143 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | — |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes / Compliant |
| Avalanche Rated | Yes (per Infineon datasheet family) | Yes |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |