IRS2008STRPBF vs IRS2153DSPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2008STRPBF sa pamamagitan ng Infineon at IRS2153DSPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRS2008STRPBF IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2008STRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRS2008STRPBF IRS2153DSPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRS2008STRPBF —
Fungsi Half-Bridge Gate Driver Half-bridge gate driver with RC input oscillator
Driven Configuration Half-Bridge (High-Side + Low-Side, synchronous) —
Channel Type Synchronous (independent inputs) —
Bilang ng Outputs 2 (high-side + low-side) 2 (HO, LO)
Type ng Output Non-Inverting —
Logic Input Compatibility TTL/CMOS —
Input Voltage (VCC) 10 V to 20 V (per datasheet family) —
Maximum Offset Voltage (Voffset) 200 V 600 V
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Rise Time (typ.) [DATA_NEEDED: rise time ns] —
Fall Time (typ.) [DATA_NEEDED: fall time ns] —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] —
VCC UVLO Threshold Yes (per datasheet family) —
VBS UVLO Threshold Yes (per datasheet family) —
Shutdown Pin (SD) Yes (active logic-level shutdown) —
Temperature na Operasyon -40 C to +125 C (industrial) -40 C to +125 C
Packhaging 8-SOIC (SOIC N), 3.90 mm body width 8-SOIC (SOIC-8)
Uri ng Pagpapasok Surface Mount (Tape & Reel) Surface Mount
Lead Finish Matte Tin (lead-free) —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL rating] —
Configuration — High-side + low-side driver, half-bridge
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)
Technology — HVIC + latch-immune CMOS

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