ISC011N06LM5ATMA1 vs IPLU300N04S41R1XTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N06LM5ATMA1 sa pamamagitan ng Infineon at IPLU300N04S41R1XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N06LM5ATMA1 ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 ✓ Nakahanda
Infineon
IPLU300N04S41R1XTMA1 IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC011N06LM5ATMA1 IPLU300N04S41R1XTMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 IPLU300N04S41R1XTMA1
Technology OptiMOS 5 OptiMOS (Trench MOSFET)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Packhaging PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-HSOF-8-1 (8-PowerSFN, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Hanay ng Temperature na Operasyon -55C to +175C —
Tindminan RoHS Compliant —
Level ng MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V<sub>DS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 300 A
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 300 W
R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) — 1.15 mΩ
Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) — 151 nC
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) — 12,090 pF
Gate-Source Voltage (V<sub>GS</sub>) — ±20 V
Temperature ng Junction na Operasyon — 175 °C
Peak Reflow Temperature (AEC-Q) — 260 °C
Avalanche Rating — 100% Avalanche Tested
RoHS Compliance — Yes (Green Product)
Lead-Free — Yes (100% lead-free)
Configuration — Single with built-in diode
Packing — Tape & Reel (TR)

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