ISC033N03LF2SATMA1 vs ISC028N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC033N03LF2SATMA1 sa pamamagitan ng Infineon at ISC028N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC033N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| MPN | ISC033N03LF2SATMA1 | — |
| Part Family | OptiMOS LF2 (<= 40V) | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench (<= 40V) | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC | 108 A | — |
| Continuous Drain Current (ID) at TA | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum On-Resistance RDS(on) max | 3.3 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage rating] | — |
| Gate Threshold Voltage VGS(th) typ | 2.35 V | 2.35 V |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Packhaging | PG-TDSON-8-62 (Source-Down, 5x6 mm) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Junction Temperature (TJ) max | [DATA_NEEDED: junction temperature max] | — |
| Configuration | Single N-channel, source-down | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |