ISC046N13NM6ATMA1 vs ISC060N10NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC046N13NM6ATMA1 sa pamamagitan ng Infineon at ISC060N10NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC046N13NM6ATMA1 ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC046N13NM6ATMA1 ISC060N10NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 —
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 135 V 100 V
Continuous Drain Current (ID) at TA 17 A —
Continuous Drain Current (ID) at TC 142 A —
Power Dissipation (PD) at TA 3 W —
Power Dissipation (PD) at TC 211 W —
Packhaging / Kaso PG-TDSON-8 —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 C to +175 C -55 °C to +175 °C (TJ)
Technology OptiMOS 6 trench MOSFET OptiMOS 6 (thin-wafer trench)
Gate Drive (recommended) 10 V (typical) —
Tindminan RoHS Compliant Compliant
Packaging Tape & Reel —
Series — OptiMOS 6 100 V
Continuous Drain Current (ID) at Ta — 15 A
Continuous Drain Current (ID) at Tc — 97 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Drain-Source On-Resistance (RDS(on)) — 6 mΩ at VGS = 10 V, ID = 25 A
Gate-Source Threshold Voltage (VGS(th)) — 3.3 V (typical)
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 125 W
Packhaging — PG-TDSON-8 FL (5.15 x 6.15 mm)
Polarity — N-Channel
Level ng MSL — 1 (per JEDEC J-STD-020)

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